Electromigration testing of integrated circuit interconnections

The electromigration phenomenon has been one of the most intriguing physical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring techniques are described, inc...

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Bibliographic Details
Published in:Microelectronic engineering 1998-11, Vol.40 (3), p.207-221
Main Authors: Fantini, F., Lloyd, J.R., De Munari, I., Scorzoni, A.
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The electromigration phenomenon has been one of the most intriguing physical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring techniques are described, including the design of special test patterns, and statistical data analysis is briefly reviewed.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00272-X