Microstructure and electromigration in copper damascene lines

Grain sizes and crystallographic orientations of Cu were analyzed versus linewidth in damascene Cu interconnects. Pure bamboo lines were not obtained because grain size decreased as linewidth was reduced. Comparison of electromigration results, for wide line Chemical vapor deposition-Cu (3 μm) polyc...

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Bibliographic Details
Published in:Microelectronics and reliability 2000-01, Vol.40 (1), p.77-86
Main Authors: Arnaud, Lucile, Tartavel, G., Berger, T., Mariolle, D., Gobil, Y., Touet, I.
Format: Article
Language:English
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Summary:Grain sizes and crystallographic orientations of Cu were analyzed versus linewidth in damascene Cu interconnects. Pure bamboo lines were not obtained because grain size decreased as linewidth was reduced. Comparison of electromigration results, for wide line Chemical vapor deposition-Cu (3 μm) polycrystalline structure, and narrow lines (0.5 μm) quasi-bamboo structure, provided almost the same activation energy E a ∼0.65 eV, even though the poor (2 0 0) texture has rotated in the film plane for the narrow damascene lines. These results are in agreement with copper diffusion involving surface diffusion. Besides, even with a polycrystalline crystallographic orientation, PVD-Cu samples showed a better activation energy value E a =1.02 eV.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(99)00209-7