Influence of annealing condition on the properties of sputtered hafnium oxide

Hafnium oxide thin films were deposited on p-type (100) silicon wafers by reactive dc magnetron sputtering. Prior to the deposition of HfO2 films, a thin Hf film was deposited. Sputtered HfO2 thin films deposited at room temperature remain amorphous at T

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Bibliographic Details
Published in:Journal of non-crystalline solids 2002-05, Vol.303 (1), p.139-143
Main Authors: Nam, Seok-Woo, Yoo, Jung-Ho, Nam, Suheun, Choi, Hyo-Jick, Lee, Dongwon, Ko, Dae-Hong, Moon, Joo Ho, Ku, Ja-Hum, Choi, Siyoung
Format: Article
Language:English
Subjects:
Composition
defects and impurities
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Semiconductor-insulator-semiconductor structures
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Description
Summary:Hafnium oxide thin films were deposited on p-type (100) silicon wafers by reactive dc magnetron sputtering. Prior to the deposition of HfO2 films, a thin Hf film was deposited. Sputtered HfO2 thin films deposited at room temperature remain amorphous at T
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(02)00976-6