Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films from acetic acid-based sol–gel method

• Published in: Materials letters 1998, Vol.34 (3), p.157-160
• Main Authors: Xu, Baomin, Pai, Neelesh G., Cross, L.Eric
• Format: Article
• Language: English
• Subjects: Antiferroelectrics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Decoupling capacitors; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Ferroelectricity and antiferroelectricity; Lanthanum doped lead zirconate titanate stannate; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Phase transitions and curie point; Physics; Sol–gel method; Thin films
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/S0167-577X(97)00165-1

Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films with `square' hysteresis loops and zero remanent polarization were prepared, for the first time, from acetic acid-based sol–gel processing. The method has the advantages of simple procedure in solution preparation, less sensitivity to moisture and the potential to make thick films. The thin films obtained have very distinctive phase transition field, and the saturated polarization value of 37 μC/cm 2, which are suitable for high-energy-storage or decoupling capacitor applications in advanced multichip modules, as well as microactuation applications.