Incorporation of AsSe centers in ZnSe far from equilibrium

An experimental technique employing nuclear transmutation to probe the effects of As doping in ZnSe is presented. ZnSe epitaxial layers are grown from elemental Zn and elemental Se that contains the 75Se isotope. As dopants are incorporated in ZnSe through the decay of 75Se to 75As which proceeds vi...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2002-10, Vol.63 (10), p.1921-1926
Main Authors: FARMER, J. W, BOONE, Jack L, BRAKENSIEK, Nickolas L, WHEELER, E. D, CHANDRASEKHAR, H. R, MARTIN, C. M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Structure of solids and liquids
crystallography
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Summary:An experimental technique employing nuclear transmutation to probe the effects of As doping in ZnSe is presented. ZnSe epitaxial layers are grown from elemental Zn and elemental Se that contains the 75Se isotope. As dopants are incorporated in ZnSe through the decay of 75Se to 75As which proceeds via electron capture. The 118.5 day half-life of the decay allows ZnSe epitaxial layers to be deposited prior to As formation so that AsSe dopants are incorporated after all crystal growth processes are complete. Also, the temperature at the time of dopant incorporation is under investigator control. Because the decay process produces nuclear recoils that are far too small to displace the As dopants from their substitutional Se sites, no post-growth thermal annealing is required. This experimental technique permits a limiting case of far-from-equilibrium doping, and the long half-life of 75Se results in the gradual incorporation of AsSe so that time-resolved studies can be performed. In the experimental work reported here, AsSe centers are introduced in ZnSe homoepitaxial layers in concentrations greater than 1.5x1018 cm-3. Time-resolved low temperature photoluminescence is employed to observe the effects of AsSe doping of ZnSe. 29 refs.
ISSN:0022-3697
1879-2553
DOI:10.1016/S0022-3697(02)00178-6