Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology

The FSG (fluorine-doped silicon glass) was introduced as dielectric for copper interconnects in order to take advantage of its lower dielectric constant. With a gain of 18% in the constant value, it makes the shrink of metal dimension possible for 0.12- mu m technology devices with limited cross-tal...

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Bibliographic Details
Published in:Microelectronic engineering 2002, Vol.60 (1-2), p.113-118
Main Authors: REYNARD, J. P, VEROVE, C, SABOURET, E, MOTTE, P, DESCOUTS, B, CHATON, C, MICHAILOS, J, BARLA, K
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The FSG (fluorine-doped silicon glass) was introduced as dielectric for copper interconnects in order to take advantage of its lower dielectric constant. With a gain of 18% in the constant value, it makes the shrink of metal dimension possible for 0.12- mu m technology devices with limited cross-talks or delays in the information transmission. In spite of its strong sensitivity to water and moisture absorption, we could integrate this material in the dual damascene structure for copper application for 0.12- mu m technology. The use of appropriate capping layer and optimisation of fluorine content made the integration possible with optimal dielectric properties. copyright 2002 Elsevier Science B.V. All rights reserved.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00586-X