Influence of output impedance on power added efficiency of Si-bipolar power transistors

The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies. FE a...

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Bibliographic Details
Main Authors: van Rijs, F., Dekker, R., Visser, H.A., Huizing, H.G.A., Hartskeerl, D., Magnee, P.H.C., Dondero, R.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Capacitance
GSM
Impedance
Power amplifiers
Power generation
Power measurement
Power transistors
Radio frequency
Voltage
Online Access:Request full text
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Summary:The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies. FE as high as 77% at 1.8 GHz with 3.5 V supply voltage have been obtained.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.862364