An alternative method for metallization by laser and ion beam irradiation

A scanning Ar + laser beam and a focused 30 keV Ga + ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or io...

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Bibliographic Details
Published in:Microelectronic engineering 2002-04, Vol.60 (3), p.429-437
Main Authors: Machalett, F, Edinger, K, Diegel, M, Steenbeck, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Interconnects
Ion irradiation
Laser application
Metallization
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Summary:A scanning Ar + laser beam and a focused 30 keV Ga + ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO 2 film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga + ion beam (energy: 300 keV, dose: 5×10 15 Ga +/cm 2). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00703-1