An investigation into the effect of modified firing profiles on the piezoelectric properties of thick-film PZT layers on silicon

• Published in: Measurement science & technology 2000-05, Vol.11 (5), p.526-531
• Main Authors: Glynne-Jones, P, Beeby, S P, Dargie, P, Papakostas, T, White, N M
• Format: Article
• Language: English
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; Dielectric, ferroelectric, and piezoelectric devices; Electronics; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
• ISSN: 0957-0233; 1361-6501
• DOI: 10.1088/0957-0233/11/5/312

Screen-printed lead zirconate titanate (PZT) layers offer possibilities both for sensing and actuation applications. The reaction between PZT and silicon during the high temperature sintering phase is a problem when combining PZT layers with Si microelectromechanical systems. This study investigates a range of longer, lower temperature firing profiles for thick film PZT to reduce this reaction. Methods of measuring the piezoelectric coefficient of PZT layers are reviewed and the test rig used to compare samples is described. Temperatures below 800\0\C are found to be insufficient to produce sintering. At other low temperatures, longer firing times are found to be necessary in order to produce consistent results. A temperature of 800\0\C for 8 h was found to produce a reduction in the level of reaction without a serious reduction of the piezoelectric activity. (Original abstract)