Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

The effects of high-temperature-grown AlN multiple intermediate layers (HT-AlN-MILs) on the crystal quality of Ga-polarity GaN layers grown on (0001) Al 2 O 3 substrates by molecular beam epitaxy using rf-plasma nitrogen source were investigated. The high-temperature-grown AlN intermediate layers (H...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-01, Vol.39 (4B), p.L330-L333
Main Authors: Kikuchi, Akihiko, Yamada, Takayuki, Nakamura, Shinichi, Kusakabe, Kazuhide, Sugihara, Daisuke, Kishino, Katsumi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of high-temperature-grown AlN multiple intermediate layers (HT-AlN-MILs) on the crystal quality of Ga-polarity GaN layers grown on (0001) Al 2 O 3 substrates by molecular beam epitaxy using rf-plasma nitrogen source were investigated. The high-temperature-grown AlN intermediate layers (HT-AlN-ILs) with different thicknesses were found to play different roles in the improvement of crystal quality. The 8-nm-thick HT-AlN-ILs brought about improvement of electrical properties. On the other hand, the 2-nm-thick HT-AlN-ILs improved the surface morphology. The combination of these 8-nm-HT-AlN-ILs and 2-nm-HT-AlN-ILs improved both the electrical properties and the surface morphology concurrently.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L330