Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy

N doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conduct...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-11, Vol.41 (Part 2, No. 11B), p.L1281-L1284
Main Authors: Ashrafi, A. B. M. Almamun, Suemune, Ikuo, Kumano, Hidekazu, Tanaka, Satoru
Format: Article
Language:English
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Summary:N doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (NA-ND) of approximately 1014 cm-3, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the NA-ND up to approximately 5 x 1016 cm-3. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers. 12 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L1281