Annealing of Cd sub(1-x)Zn sub(x)Te in CdZn vapors

• Published in: Journal of electronic materials 2002-08, Vol.31 (8), p.834-840
• Main Authors: Li, Yujie, Ma, Guoli, Zhan, Xiaona, Jie, Wanqi
• Format: Article
• Language: English
• ISSN: 0361-5235

As-grown CdZnTe usually contains defects, such as twins, subgrain boundaries, dislocations, and Te precipitates. It is always important to anneal CdZnTe slices in Cd vapor to eliminate these defects, especially Te precipitates. The exchange of Zn atoms between the slices and the vapor plays an important role during the annealing process. In this paper, the effects of Zn partial pressure on the properties of the annealed slices are studied carefully by measuring the concentration profiles, the infrared (IR) transmission spectra, and the x-ray rocking curves. It was found that a surface layer with different compositions and possibly different structure from the bulk crystal formed during the annealing of CdZnTe samples in the saturated Zn vapor. The accumulation of excess Te in the surface layer helps to increase the IR permeability of the bulk crystal greatly. To improve the crystallization quality, a lower Zn-pressure annealing should be used following the high Zn-pressure annealing. The diffusion of Zn in the bulk crystal has also been analyzed at the temperatures of 700 degree C and 500 degree C. Calculations determined that D sub(Zn) (700 degree C) = 4.02 x 10 super(-12) cm super(2)s super(-1) and D sub(Zn) (500 degree C) = 1.22 x 10 super(-13)cm super(2)s super(-1).