MOVPE growth of AlGaAs/GaInP diode lasers

GaAs-based diode lasers for emission wavelengths between 800 and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths above 940 nm broad area devices with InGaAs QWs show state-of-the-art threshold current densities. Ridge-waveguide lasers fabricated by select...

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Bibliographic Details
Published in:Journal of electronic materials 2000-01, Vol.29 (1), p.57-61
Main Authors: Bugge, F., Knauer, A., Gramlich, S., Rechenberg, I., Beister, G., Sebastian, J., Wenzel, H., Erbert, G., Weyers, M.
Format: Article
Language:English
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Summary:GaAs-based diode lasers for emission wavelengths between 800 and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths above 940 nm broad area devices with InGaAs QWs show state-of-the-art threshold current densities. Ridge-waveguide lasers fabricated by selective etching achieve 200 mW CW monomode output powers. (In)GaAsP QW-based diode lasers with an emitting wavelengths around 800 nm suffer from problems at the upper GaInP/AlGaAs interface. Asymmetric structures with a lower AlGaAs/GaInP and an upper AlGaAs/AlGaAs waveguide not only avoid this interface but also offer better carrier confinement. Such structures show very high slope efficiencies and a high T0. Maximum output powers of 7 W CW are obtained from 4 mm long devices. 17 refs.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-000-0095-3