Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors

Wet etch processing techniques for InGaAs/InAl/As/InGaAs transistors are used to fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe contacts. These processing techniques can easily be extended for dilute magnetic semiconductor regrowth and for testing of various spin injection g...

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Bibliographic Details
Published in:Solid-state electronics 2000-12, Vol.44 (12), p.2117-2122
Main Authors: LaRoche, J.R., Ren, F., Temple, D., Pearton, S.J., Kuo, J.M., Baca, A.G., Cheng, P., Park, Y.D., Hudspeth, Q., Hebard, A.F., Arnason, S.B.
Format: Article
Language:English
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Summary:Wet etch processing techniques for InGaAs/InAl/As/InGaAs transistors are used to fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe contacts. These processing techniques can easily be extended for dilute magnetic semiconductor regrowth and for testing of various spin injection geometries.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(00)00143-X