An integrated 900-MHz push-pull power amplifier for mobile applications

This paper describes a two-stage 900-MHz push-pull type GaAs HBT MMIC power amplifier with 3.2W (35dBm) maximum output power and 57% maximum power added efficiency with a supply voltage of 3.5V. The small-signal gain of the PA is 30dB. The size of the realized power amplifier chip is 1.2*1.3mm/sup 2...

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Bibliographic Details
Main Authors: Matilainen, M.J., Nummila, K.L.I., Jarvinen, E.A., Kalajo, S.J.K.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Circuit topology
Gallium arsenide
Grounding
Heterojunction bipolar transistors
Impedance
Inductance
Mobile handsets
Power amplifiers
Power generation
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Description
Summary:This paper describes a two-stage 900-MHz push-pull type GaAs HBT MMIC power amplifier with 3.2W (35dBm) maximum output power and 57% maximum power added efficiency with a supply voltage of 3.5V. The small-signal gain of the PA is 30dB. The size of the realized power amplifier chip is 1.2*1.3mm/sup 2/. The drawbacks and advantages of the push-pull topology are discussed and compared to a traditional single-ended topology.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.863316