Anomalous diffusion of boron in silicon driven under the N sub(2)O ambient

In this letter, p super(+)/n junctions formed by a solid source of a boron-doped layer under different ambient gases will be demonstrated. In this study, it was found that the obtained junction depth depends strongly on the ambient gas. Especially in the N sub(2)O ambient, the diffusion of boron is...

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Bibliographic Details
Published in:IEEE electron device letters 2000-12, Vol.21 (12), p.572-574
Main Authors: Liu, Don-Gey, Yang, Wen Luh, Tsang, Jiang-Shihn, Chu, Kuo Wei, Shiau, Miin-Shyue, Yang, Shui-Yuan, Hung, Yu Ming
Format: Article
Language:English
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Summary:In this letter, p super(+)/n junctions formed by a solid source of a boron-doped layer under different ambient gases will be demonstrated. In this study, it was found that the obtained junction depth depends strongly on the ambient gas. Especially in the N sub(2)O ambient, the diffusion of boron is enormously enhanced. The resulting junction depth can be as high as eight times of those junctions formed in N sub(2). Such phenomenon is much more profound than the well-known oxidation-enhanced diffusion (OED) effect of O sub(2). We call this new effect as the nitri-oxidation-enhanced diffusion (NOED) effect. As a consequence, it is proposed that the NOED effect is instrumental for low-cost fabrication of well structures in the CMOS technology.
ISSN:0741-3106