An estimate of Si sub 3 N sub 4 diffusion into Cu based filler metal

The diffusion phenomena occurring at the boundary between Si sub 3 N sub 4 and active Cu based filler metal during Si sub 3 N sub 4 /metal joining are discussed as a part of the general theory of reaction layer growth. The mechanism of reaction layer formation is explained in the light of wettabilit...

Full description

Saved in:
Bibliographic Details
Published in:Ceramics international 2000-01, Vol.26 (1), p.19-24
Main Author: Raic, K T
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The diffusion phenomena occurring at the boundary between Si sub 3 N sub 4 and active Cu based filler metal during Si sub 3 N sub 4 /metal joining are discussed as a part of the general theory of reaction layer growth. The mechanism of reaction layer formation is explained in the light of wettability, heterogeneous chemical reactions and diffusion in the presence of a moving interface. Observed processes involve diffusion steps in conjunction with chemical reactions at solid/liquid boundary. Illustrative calculation results based on the proposed procedure are presented. (Example: reactive brazing joining silicon nitride and tungsten.)
ISSN:0272-8842