A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs

• Published in: IEEE transactions on electron devices 2002-03, Vol.49 (3), p.514-520
• Main Authors: Sanden, M., Marinov, O., Deen, M.J., Ostling, M.
• Format: Article
• Language: English
• Subjects: 1/f noise; bipolar junction transistors; bipolar transistor; Density; Emitters (electron); Equivalence; High speed; interfacial oxide; low-frequency noise; Mathematical models; Noise; Noise levels; noise modeling; polysilicon emitter; random telegraph signal; Semiconductor device noise; Spectral emittance
• ISSN: 0018-9383; 1557-9646; 1557-9646
• DOI: 10.1109/16.987124

Presents a new, physically-based model for the low-frequency noise in high-speed polysilicon emitter bipolar junction transistors (BJTs). Evidence of the low-frequency noise originating mainly from a superposition of generation-recombination (g-r) centers is presented. Measurements of the equivalent input noise spectral density (SIB) showed that for BJTs with large emitter areas (AE) S(I/sub B/) is proportional to 1/f, as expected. In contrast, the noise spectrum for BJTs with submicron A/sub E/ showed a strong variation from a 1/f-dependence, due to the presence of several g-r centers. However, the average spectrum has a frequency dependence proportional to 1/f for BJTs with large as well as small A/sub E/. The proposed model, based only on superposition of g-r centers, can predict the frequency-, current-, area-, and variation-dependency of with excellent agreement to the measured results.