A new process for deposition of the CdTe thin films

• Published in: Materials chemistry and physics 2000-08, Vol.65 (3), p.282-287
• Main Authors: Patil, V.B, More, P.D, Sutrave, D.S, Shahane, G.S, Mulik, R.N, Deshmukh, L.P
• Format: Article
• Language: English
• Subjects: Band gap; Cross-disciplinary physics: materials science; rheology; Direct transitions; Exact sciences and technology; Hexagonal and cubic; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; n-CdTe; New process; Physics
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/S0254-0584(00)00237-6

An extremely simple and cheap method for deposition of the n-CdTe thin films is presented. Good quality deposits are obtained at 75°C, 10±0.5 pH, and deposition time equal to 90 min. Light grey coloured and uniform CdTe layers of approximately 0.3 μm thick are obtained by this process. The compositional analyses showed that the baked CdTe films are little bit Cd-rich. The as-deposited CdTe layers are crystalline with a mixture of the hexagonal and cubic structures. The microscopic observations show some overgrowth on the grown spherical type crystallites which improve after baking at 100°C. Optical studies revealed a high absorption coefficient (10 4 cm −1) with a direct gap of 1.45 eV. The films are of the n-type conduction with a room temperature electrical resistivity of 10 6 Ω cm. The activation energies of an electrical conduction have been determined and the possible conduction mechanism is discussed.