Photoluminescence of GaAs under surface acoustic wave propagation in high magnetic fields

We investigate the variation of the quenching of photoluminescence (PL) by surface acoustic waves (SAWs) when the depth profile of the SAW-induced electric fields is altered. The PL transition from the conduction band to acceptor states is restricted to regions near the GaAs surface. The acceptor-bo...

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Bibliographic Details
Published in:Microelectronic engineering 2002-08, Vol.63 (1), p.205-209
Main Authors: Takagaki, Y, Wiebicke, E, Zhu, H.J, Hey, R, Ramsteiner, M, Ploog, K.H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron–hole recombination
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Piezoelectric effect
Surface acoustic wave
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Summary:We investigate the variation of the quenching of photoluminescence (PL) by surface acoustic waves (SAWs) when the depth profile of the SAW-induced electric fields is altered. The PL transition from the conduction band to acceptor states is restricted to regions near the GaAs surface. The acceptor-bound exciton recombination takes place in a region that extends far deeper than the laser-excited volume. The response of PL in high magnetic fields provides evidence for magnetic-field-induced trapping of electrons and holes around disorder potentials.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00619-6