Picosecond pulse generation for visible semiconductor laser operating at 650-nm wavelength with the use of the gain-switching technique

Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. © 2002 Wiley Per...

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Bibliographic Details
Published in:Microwave and optical technology letters 2002-10, Vol.35 (1), p.65-67
Main Authors: Oh, Kwang H., Hwang, N., Koh, J. S., Kim, Dug Y.
Format: Article
Language:English
Subjects:
gain switching
optical communications
optical short pulse
rf device
semiconductor laser
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Summary:Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 65–67, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10517
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.10517