Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor

A novel Schottky barrier SOI MOSFET device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal subthreshold slope (approx 60 mV/decade) and high on-/off-state current ratio (...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-06, Vol.41 (Part 2, No. 6A), p.L626-L628
Main Authors: Lin, Horng-Chih, Wang, Meng-Fan, Hou, Fu-Ju, Liu, Jan-Tsai, Huang, Tiao-Yuan, Sze, Simon M.
Format: Article
Language:English
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Summary:A novel Schottky barrier SOI MOSFET device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal subthreshold slope (approx 60 mV/decade) and high on-/off-state current ratio (comparable to or > 109) is realized on a single device. Results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of CMOS-like devices. 17 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L626