Plastic behavior of 4H-SiC single crystals deformed at low strain rates

The present paper reports compression experiments on 4H-SiC single crystals at low strain rates in the temperature range 800-1350 deg C. In addition to the deformation tests, a microstructural analysis of the deformed samples, carried out by transmission electron microscopy (TEM), is reported. The r...

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Bibliographic Details
Published in:Scripta materialia 2000-10, Vol.43 (9), p.865-870
Main Authors: Demenet, J.-L, Hong, M.H, Pirouz, P
Format: Article
Language:English
Subjects:
Brittle-to-ductile transition
Condensed matter: structure, mechanical and thermal properties
Dislocations
Elasticity, elastic constants
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Mechanical properties
Mechanical properties of solids
Physics
Semiconductors
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Summary:The present paper reports compression experiments on 4H-SiC single crystals at low strain rates in the temperature range 800-1350 deg C. In addition to the deformation tests, a microstructural analysis of the deformed samples, carried out by transmission electron microscopy (TEM), is reported. The results are discussed in the light of a model presented elsewhere.
ISSN:1359-6462
1872-8456
DOI:10.1016/S1359-6462(00)00495-4