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Phosphorus Vacancy as a Deep Level in AlInP Layers
Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Exa...
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Published in: | Japanese Journal of Applied Physics 2000-01, Vol.39 (6B), p.L567-L568 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition
(MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level
transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was
observed with the activation energy of 0.65 eV. Examining this
phosphorus-vacancy-related deep level provided a relatively simple means of
understanding the phosphorus vacancy in AlInP, thus allowing us to determine an
appropriate V/III mole ratio for growing AlInP. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.L567 |