New SOI Complementary-Bipolar Complementary-MOS (CBiCMOS) with Merged Device Structure

• Published in: Japanese Journal of Applied Physics 2000, Vol.39 (4S), p.2241-2245
• Main Authors: Zheng, Yue-Sheng, Asano, Tanemasa
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.39.2241

A complementary-bipolar complementary-metal-oxide-semiconductor (CBiCMOS) inverter has been developed using bipolar/metal-oxide-semiconductor (MOS) merged transistors on a silicon-on-insulator (SOI) structure. The pull-up and pull-down functions are driven by p-channel-MOS/npn and n-channel-MOS/pnp merged transistors, respectively. The merged transistor consists of a bipolar structure built in to the drain regions of each MOS field-effect-transistor (MOSFET) of the complementary MOS (CMOS) device, which amplifies the channel current. The device has been fabricated using a reverse bond-and-lap technique to form a fully isolated silicon on insulator. The amplification of the MOSFET current by the built-in bipolar transistor is experimentally verified. Logic operation of the inverter is demonstrated. The dependence of the propagation delay time on the load capacitance connected to inverters indicates that the new SOI-CBiCMOS has a much larger driving ability than conventional CMOS.