Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films

Electron spin resonance (ESR) spectroscopy is used to explore the origin of positive charges in silicon oxynitride thin films formed in a N 2 O ambient. A new type of paramagnetic center in as-grown oxynitrides appears as a single peak in the ESR spectrum with a zero crossing g value of 2.0006. This...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-10, Vol.39 (10A), p.L987-L989
Main Authors: Miura, Yoshinao, Fujieda, Shinji, Hasegawa, Eiji
Format: Article
Language:English
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Summary:Electron spin resonance (ESR) spectroscopy is used to explore the origin of positive charges in silicon oxynitride thin films formed in a N 2 O ambient. A new type of paramagnetic center in as-grown oxynitrides appears as a single peak in the ESR spectrum with a zero crossing g value of 2.0006. This value suggests that the paramagnetic center is a kind of E ′ center. We investigate the quantitative behavior of the positive charge center and the paramagnetic center through their density changes induced by vacuum ultraviolet irradiation and hydrogen annealing. Based on the similar behavior of both centers, we propose that the paramagnetic centers can account for a significant part of the positive charges specific to oxynitrides.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L987