Pb deposition on n-Si(111):H electrodes: an in situ X-ray study

Growth mode and epitaxial properties of electrochemically deposited Pb on hydrogen-terminated n-Si(111) were studied by using in situ X-ray standing waves and surface X-ray diffraction. Pb shows a Volmer–Weber growth mode and the Pb crystallites grow predominantly epitaxially, with the (111) planes...

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Bibliographic Details
Published in:Surface science 2000-05, Vol.452 (1), p.150-160
Main Authors: Ziegler, J.C., Scherb, G., Bunk, O., Kazimirov, A., Cao, L.X., Kolb, D.M., Johnson, R.L., Zegenhagen, J.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Electrochemical methods
Electrodeposition, electroplating
Epitaxy
Exact sciences and technology
Lead
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Silicon
Single crystal surfaces
Solid–liquid interfaces
X-ray scattering, diffraction, and reflection
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Summary:Growth mode and epitaxial properties of electrochemically deposited Pb on hydrogen-terminated n-Si(111) were studied by using in situ X-ray standing waves and surface X-ray diffraction. Pb shows a Volmer–Weber growth mode and the Pb crystallites grow predominantly epitaxially, with the (111) planes parallel to the Si(111) planes and with a preferred in-plane orientation.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(00)00310-1