Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 μm at 20°C with output power of 1.2 mW have been realized. Threshold currents approach 1–1.5 mA for 8-μm oxide apertures. Operating voltages are ∼2 V. Long operation lifetimes in excess of 5000 h...

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Bibliographic Details
Published in:MRS bulletin 2002-07, Vol.27 (7), p.531-537
Main Authors: Bimberg, D., Ledentsov, N.N., Lott, J.A.
Format: Article
Language:English
Subjects:
chemical vapor deposition (CVD)
compound semiconductors
crystal growth
crystal structure
electrical properties
molecular-beam epitaxy (MBE)
optical properties
optoelectronic materials
photoluminescence
quantum dots (QDs)
Technical Feature
transmission electron microscopy (TEM)
vertical-cavity surface-emitting lasers (VCSELs)
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Summary:GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 μm at 20°C with output power of 1.2 mW have been realized. Threshold currents approach 1–1.5 mA for 8-μm oxide apertures. Operating voltages are ∼2 V. Long operation lifetimes in excess of 5000 h at 50°C without degradation have been achieved. This article describes these breakthroughs, which are based on our development of complex self-organized growth technologies for defect-free stacked quantum dots.
ISSN:0883-7694
1938-1425
DOI:10.1557/mrs2002.172