Preparation and characterization of RuO sub(2) thin films from Ru(CO) sub(2 )(tmhd) sub(2) by metalorganic chemical vapor deposition

A new metalorganic ruthenium compound which contained two beta -diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO sub(2)) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films in...

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Bibliographic Details
Published in:Thin solid films 2002-06, Vol.413 (1-2), p.85-91
Main Authors: Chen, Reui-San, Huang, Ying-Sheng, Chen, Yao-Lun, Chi, Yun
Format: Article
Language:English
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Summary:A new metalorganic ruthenium compound which contained two beta -diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO sub(2)) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films including scanning electron microscopy (SEM), electrical resistivity, Raman scattering and X-ray diffraction measurements were carried out. The surface morphology of the films was investigated by SEM, from which a columnar growth pattern was observed using a cross-sectional scanning electron micrograph analysis. The resistivity measurement shows a metallic conducting characteristic, while Raman study indicates the formation of a high quality, nearly stress-free RuO sub(2) film. In addition, changes of structural and electrical properties after thermal annealing are discussed. copyright 2002 Elsevier Science B.V. All rights reserved.
ISSN:0040-6090