ROOM TEMPERATURE 339 nm EMISSION FROM Al0.13Ga0.87N/Al0.10Ga0.90N DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODE ON SAPPHIRE SUBSTRATE

RT deep-uv emission has been observed from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diodes (LEDs) on (0001)-oriented sapphire substrate. By introducing undoped barrier layers, which sandwich the active layer, the LED was operated at a peak emission wavelength of 339 nm with...

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Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 5B, pp. L445-L448. 2000 Part 2. Vol. 39, no. 5B, pp. L445-L448. 2000, 2000, Vol.39 (5B), p.L445-L448
Main Authors: Otsuka, N, Tsujimura, A, Hasegawa, Y, Sugahara, G, Kume, M, Ban, Y
Format: Article
Language:English
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Summary:RT deep-uv emission has been observed from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diodes (LEDs) on (0001)-oriented sapphire substrate. By introducing undoped barrier layers, which sandwich the active layer, the LED was operated at a peak emission wavelength of 339 nm with a narrow linewidth of 5.6 nm. The dependence of emission intensity on injection current suggests that the nonradiative recombination was suppressed and the diffusion current for the recombination process was dominant at the injection current of over 20 mA. 22 refs.
ISSN:0021-4922
DOI:10.1143/jjap.39.L445