Preparation of Al- and Li-Doped ZnO Thin Films by Sol-Gel Method

Conducting Al-doped ZnO and insulating Li-doped ZnO thin films were prepared by the sol-gel method. All the films exhibited c-axis-orientation perpendicular to substrates. The crystallite size of ZnO monotonically decreased with increasing dopant concentration. Doping 1 mol pct of Al in the ZnO film...

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Bibliographic Details
Published in:Key engineering materials 2000-01, Vol.181-182, p.109-112
Main Authors: Fujihara, Shinobu, Kimura, Toshio, Sasaki, Chikako
Format: Article
Language:English
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Summary:Conducting Al-doped ZnO and insulating Li-doped ZnO thin films were prepared by the sol-gel method. All the films exhibited c-axis-orientation perpendicular to substrates. The crystallite size of ZnO monotonically decreased with increasing dopant concentration. Doping 1 mol pct of Al in the ZnO film minimized the sheet resistance on the order of 0.5 M/Ohm. The conducting behavior of the Li-doped ZnO film was found to depend greatly on the heat-treatment temperature. A current density of 3 x 10 exp -6 and 1 x 10 exp -3 A/sq cm at an applied voltage of 5 V was observed for the 10 mol pct Li-doped ZnO films heat-treated at 500 and 600 C, respectively. (Author)
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.181-182.109