Selective Dual‐Ion Modulation in Solid‐State Magnetoelectric Heterojunctions for In‐Memory Encryption

• Published in: Small (Weinheim an der Bergstrasse, Germany) Germany), 2023-04, Vol.19 (16), p.e2206824-n/a
• Main Authors: Ye, Xiaoyu, Zhu, Xiaojian, Yang, Huali, Duan, Jipeng, Gao, Shuang, Sun, Cui, Liu, Xuerong, Li, Run‐Wei
• Format: Article
• Language: English
• Subjects: Heterojunctions; in‐memory encryption; Magnetoresistance; magnetoresistance symmetry; Magnetoresistivity; Memory devices; Modulation; multifunctional nanodevices; nanoionics; Nanotechnology; Nanotechnology devices; Physical properties; selective dual‐ion modulation
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.202206824

Nanoionic technologies are identified as a promising approach to modulating the physical properties of solid‐state dielectrics, which have resulted in various emergent nanodevices, such as nanoionic resistive switching devices and magnetoionic devices for memory and computing applications. Previous studies are limited to single‐type ion manipulation, and the investigation of multiple‐type ion modulation on the coupled magnetoelectric effects, for developing information devices with multiple integrated functionalities, remains elusive. Here, a dual‐ion solid‐state magnetoelectric heterojunction based on Pt/HfO2−x/NiOy/Ni with reconfigurable magnetoresistance (MR) characteristics is reported for in‐memory encryption. It is shown that the oxygen anions and nickel cations can be selectively driven by voltages with controlled polarity and intensity, which concurrently change the overall electrical resistance and the interfacial magnetic coupling, thus significantly modulate the MR symmetry. Based on this device, a magnetoelectric memory prototype array with in‐memory encryption functionality is designed for the secure storage of image and digit information. Along with the advantages including simple structure, multistate encryption, good reversibility, and nonvolatile modulation capability, this proof‐of‐concept device opens new avenues toward next‐generation compact electronics with integrated information functionalities. A dual‐ion solid‐state magnetoelectric heterojunction based on Pt/HfO2−x/NiOy/Ni with reconfigurable magnetoresistance symmetry for in‐memory encryption is reported. The device leads to a magnetoelectric memory array for the secure storage of image and digit information, possessing advantages including simple structure, multistate encryption, good reversibility, and nonvolatile modulation capability. This finding opens new avenues toward next‐generation compact electronics with integrated information functionalities.