ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

This paper presents a state-of-art ESD protection design for an RF circuit with a human-body-model (HBM) ESD robustness of 8 kV. By including a turn on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, ra...

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Bibliographic Details
Main Authors: Ker, Ming-Dou, Lo, Wen-Yu, Lee, Chien-Ming, Chen, Chia-Pei, Kao, Hong-Sing
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Circuits
Clamps
CMOS process
Electric breakdown
Electrostatic discharge
Protection
Radio frequency
Robustness
Testing
Online Access:Request full text
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Summary:This paper presents a state-of-art ESD protection design for an RF circuit with a human-body-model (HBM) ESD robustness of 8 kV. By including a turn on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-/spl mu/m CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011675