Substrate dopant imaging for layout reconstruction of integrated-circuit layers

Procedures have been established for layout reconstruction of complete integrated circuits so that topology and function can be determined. Circuits are imaged repeatedly, after the removal of successive layers, by electron-beam and light-optical techniques. For the polysilicon layer, layout determi...

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Bibliographic Details
Published in:Microelectronic engineering 2002-07, Vol.61, p.1063-1067
Main Authors: Weaver, D.J., Cleaver, J.R.A., Avery, L., Ahmed, H.
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Dopant imaging
Electronics
Exact sciences and technology
i.c. Layout recovery
Imaging devices
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Polysilicon imaging
Reverse engineering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Procedures have been established for layout reconstruction of complete integrated circuits so that topology and function can be determined. Circuits are imaged repeatedly, after the removal of successive layers, by electron-beam and light-optical techniques. For the polysilicon layer, layout determination is complicated by processing artefacts and by low discrimination between materials in backscattered-electron images. Combination of images has facilitated interpretation of polysilicon patterns, whilst active-device regions and doped wells in the substrate have been investigated with optical microscopy and staining.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00583-X