Resists for next generation lithography

Four next generation lithographic options (EUV, X-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. Studies are also made comparing absorption characteristics and their role in polymer design for NGL R...

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Bibliographic Details
Published in:Microelectronic engineering 2002-07, Vol.61, p.707-715
Main Authors: Brainard, Robert L., Barclay, George G., Anderson, Erik H., Ocola, Leonidas E.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
EPL
EUV
Exact sciences and technology
IPL
LER
Microelectronic fabrication (materials and surfaces technology)
NGL
Photoresists
Resists
Resolution
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
X-ray
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Summary:Four next generation lithographic options (EUV, X-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. Studies are also made comparing absorption characteristics and their role in polymer design for NGL Resists. EUV, X-ray, EPL, and IPL all have important, but distinct, requirements for resist sensitivity. EPL requires resists that are 30 times more sensitive than UV6™. Although the needs are less extreme, EUV and X-ray also require sensitivities that are beyond most conventional resists. IPL does not appear to have sensitivity issues. Quite often, increases in resist sensitivity can only be achieved at the cost of other important resist properties, such as resolution, environmental stability and line edge roughness. This challenge must be met in order to properly design resists for NGL.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00564-6