Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers

Spontaneous emission spectra of (111) and (100) InGaAs/GaAs QW lasers with high In content are measured up to high injection levels and compared with the theoretical results of our own model. Piezoelectric effects are investigated in (111) devices, finding significant contribution of forbidden trans...

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Bibliographic Details
Published in:Microelectronics 2002-07, Vol.33 (7), p.589-593
Main Authors: Ulloa, J.M., Borruel, L., Tijero, J.M.G., Temmyo, J., Esquivias, I., Izpura, I., Sánchez-Rojas, J.L.
Format: Article
Language:English
Subjects:
Band gap renormalization
Coulomb interaction
Piezoelectric effects
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Summary:Spontaneous emission spectra of (111) and (100) InGaAs/GaAs QW lasers with high In content are measured up to high injection levels and compared with the theoretical results of our own model. Piezoelectric effects are investigated in (111) devices, finding significant contribution of forbidden transitions and a strong blue shift due to carrier screening of piezoelectric field. Band gap renormalization (BGR) in (111) QW lasers is estimated from the measured broadening of the low energy side of the spectrum comparing with model, and corrected by a fundamental band edge. It is also theoretically calculated, including screening effects of the coulomb interaction, in order to explain the estimated results. BGR is found to be higher in (111) samples than in (100) ones, the difference being mainly due to the hole contribution.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(02)00024-1