An estimate of Si3N4 diffusion into Cu based filler metal

The diffusion phenomena occurring at the boundary between Si3N4 and active Cu based filler metal during Si3N4/metal joining are discussed as a part of the general theory of reaction layer growth. The mechanism of reaction layer formation is explained in the light of wettability, heterogeneous chemic...

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Bibliographic Details
Published in:Ceramics international 2000, Vol.26 (1), p.19-24
Main Author: RAIC, K. T
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Miscellaneous
Technical ceramics
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Summary:The diffusion phenomena occurring at the boundary between Si3N4 and active Cu based filler metal during Si3N4/metal joining are discussed as a part of the general theory of reaction layer growth. The mechanism of reaction layer formation is explained in the light of wettability, heterogeneous chemical reactions and diffusion in the presence of a moving interface. Observed processes involve diffusion steps in conjunction with chemical reactions at the solid/liquid boundary. Illustrative calculation results based on the proposed procedure are presented. 11 refs.
ISSN:0272-8842
1873-3956
DOI:10.1016/S0272-8842(99)00013-9