Study of resist surface roughness in EB lithography

Electron beam direct writing is one of the candidates for the semiconductor device fabrication of the 130nm node and below. However, as the pattern size becomes smaller, the resist surface roughness becomes the critical issue. To clarify the roughness-controlling factor, we compared the two positive...

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Bibliographic Details
Published in:Microelectronic engineering 2000-06, Vol.53 (1), p.313-316
Main Authors: Yoshida, A., Kojima, Y., Matsuoka, K., Tomo, Y., Shimizu, I., Yamabe, M.
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Lithography, masks and pattern transfer
Microelectronic fabrication (materials and surfaces technology)
Microelectronics: LSI, VLSI, ULSI
integrated circuit fabrication technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Electron beam direct writing is one of the candidates for the semiconductor device fabrication of the 130nm node and below. However, as the pattern size becomes smaller, the resist surface roughness becomes the critical issue. To clarify the roughness-controlling factor, we compared the two positive tone chemically amplified (CA) EB resists. As a result, we found that the contrast of the dissolution rate and the distribution of exposed energy cause the surface roughness of EB resists.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(00)00322-1