Structural properties of subgrain boundaries in bulk SiC crystals

The structural properties of subgrain boundaries (low-angle grain boundaries) in bulk SiC crystals have been studied using high-resolution X-ray diffraction (HRXRD) and molten KOH defect selective etching. The defect-selective etching revealed that the subgrain boundaries were polygonized into 11̄00...

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Bibliographic Details
Published in:Journal of crystal growth 2000-07, Vol.216 (1-4), p.256-262
Main Authors: Katsuno, Masakazu, Ohtani, Noboru, Aigo, Takashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Kanaya, Masatoshi
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defect-selective etching
Defects and impurities in crystals
microstructure
Exact sciences and technology
Grain and twin boundaries
HRXRD
Physics
Silicon carbide
Structure of solids and liquids
crystallography
Subgrain boundaries
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Summary:The structural properties of subgrain boundaries (low-angle grain boundaries) in bulk SiC crystals have been studied using high-resolution X-ray diffraction (HRXRD) and molten KOH defect selective etching. The defect-selective etching revealed that the subgrain boundaries were polygonized into 11̄00 directions and most often occurred at the peripheral parts of crystals. The relative misorientation between adjacent subgrains was examined by HRXRD, and it was found that the tilting of the (0001) lattice plane occurred at the subgrain boundaries and had a rotation axis parallel to both the boundary plane and the (0001) basal plane. Based on these results, we have discussed the cause and mechanism of the formation of subgrain boundaries in bulk SiC crystals.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00445-0