Surface resistance of Bi-2212 films and influence of intergrowth

We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, whil...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2000-04, Vol.331 (2), p.164-170
Main Authors: Otsuka, Jun, Yamamoto, Osamu, Sugihara, Yasuaki, Senzaki, Toshi, Ohbayashi, Kazushige, Inoue, Masumi, Fujimaki, Akira, Hayakawa, Hisao
Format: Article
Language:English
Subjects:
Bi 2Sr 2CaCu 2O x
Carrier density
Intergrowth
Superconducting films
Surface resistance
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Summary:We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, while intergrowth with Bi-2223 improved, not only the R s, but also the critical current density J c more than expected from the ratio of Bi-2223. These phenomena were discussed in terms of the change in the carrier density by the intergrowth. The improvement of these properties by the intergrowth with Bi-2223 was possibly due to the decrease in carrier density in Bi-2212, which is naturally overdoped, by the interaction with neighboring Bi-2223 cells.
ISSN:0921-4534
1873-2143
DOI:10.1016/S0921-4534(99)00627-9