Surface resistance of Bi-2212 films and influence of intergrowth

We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, whil...

Full description

Saved in:
Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2000-04, Vol.331 (2), p.164-170
Main Authors: Otsuka, Jun, Yamamoto, Osamu, Sugihara, Yasuaki, Senzaki, Toshi, Ohbayashi, Kazushige, Inoue, Masumi, Fujimaki, Akira, Hayakawa, Hisao
Format: Article
Language:English
Subjects:
Bi 2Sr 2CaCu 2O x
Carrier density
Intergrowth
Superconducting films
Surface resistance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123
cites cdi_FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123
container_end_page 170
container_issue 2
container_start_page 164
container_title Physica. C, Superconductivity
container_volume 331
creator Otsuka, Jun
Yamamoto, Osamu
Sugihara, Yasuaki
Senzaki, Toshi
Ohbayashi, Kazushige
Inoue, Masumi
Fujimaki, Akira
Hayakawa, Hisao
description We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, while intergrowth with Bi-2223 improved, not only the R s, but also the critical current density J c more than expected from the ratio of Bi-2223. These phenomena were discussed in terms of the change in the carrier density by the intergrowth. The improvement of these properties by the intergrowth with Bi-2223 was possibly due to the decrease in carrier density in Bi-2212, which is naturally overdoped, by the interaction with neighboring Bi-2223 cells.
doi_str_mv 10.1016/S0921-4534(99)00627-9
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27740439</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921453499006279</els_id><sourcerecordid>27740439</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEqXwCUhZIVgE_EjG8YpHxUuqxKKwtlx7DEZpUuwExN-TtIgts5mR5s7V3EPIMaPnjDK4WFDFWV6UojhV6oxS4DJXO2TCKilyzgqxSyZ_kn1ykNI7HYopNiFXiz56YzGLmELqTDOMrc9uQs4545kP9SplpnFZaHzd4-86NB3G19h-dW-HZM-bOuHRb5-Sl7vb59lDPn-6f5xdz3MrRNUNbt4iwHL4F-zSInMARgBKkEZyELQoK1kCcwJAWSgdR1w67oRXWAHjYkpOtr7r2H70mDq9CsliXZsG2z5pLmVBC6EGYbkV2timFNHrdQwrE781o3rkpTe89AhDK6U3vPR4d7m9wyHFZ8Cokw1jYBci2k67Nvzj8AM6dnCg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27740439</pqid></control><display><type>article</type><title>Surface resistance of Bi-2212 films and influence of intergrowth</title><source>ScienceDirect Freedom Collection</source><creator>Otsuka, Jun ; Yamamoto, Osamu ; Sugihara, Yasuaki ; Senzaki, Toshi ; Ohbayashi, Kazushige ; Inoue, Masumi ; Fujimaki, Akira ; Hayakawa, Hisao</creator><creatorcontrib>Otsuka, Jun ; Yamamoto, Osamu ; Sugihara, Yasuaki ; Senzaki, Toshi ; Ohbayashi, Kazushige ; Inoue, Masumi ; Fujimaki, Akira ; Hayakawa, Hisao</creatorcontrib><description>We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, while intergrowth with Bi-2223 improved, not only the R s, but also the critical current density J c more than expected from the ratio of Bi-2223. These phenomena were discussed in terms of the change in the carrier density by the intergrowth. The improvement of these properties by the intergrowth with Bi-2223 was possibly due to the decrease in carrier density in Bi-2212, which is naturally overdoped, by the interaction with neighboring Bi-2223 cells.</description><identifier>ISSN: 0921-4534</identifier><identifier>EISSN: 1873-2143</identifier><identifier>DOI: 10.1016/S0921-4534(99)00627-9</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Bi 2Sr 2CaCu 2O x ; Carrier density ; Intergrowth ; Superconducting films ; Surface resistance</subject><ispartof>Physica. C, Superconductivity, 2000-04, Vol.331 (2), p.164-170</ispartof><rights>2000 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123</citedby><cites>FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Otsuka, Jun</creatorcontrib><creatorcontrib>Yamamoto, Osamu</creatorcontrib><creatorcontrib>Sugihara, Yasuaki</creatorcontrib><creatorcontrib>Senzaki, Toshi</creatorcontrib><creatorcontrib>Ohbayashi, Kazushige</creatorcontrib><creatorcontrib>Inoue, Masumi</creatorcontrib><creatorcontrib>Fujimaki, Akira</creatorcontrib><creatorcontrib>Hayakawa, Hisao</creatorcontrib><title>Surface resistance of Bi-2212 films and influence of intergrowth</title><title>Physica. C, Superconductivity</title><description>We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, while intergrowth with Bi-2223 improved, not only the R s, but also the critical current density J c more than expected from the ratio of Bi-2223. These phenomena were discussed in terms of the change in the carrier density by the intergrowth. The improvement of these properties by the intergrowth with Bi-2223 was possibly due to the decrease in carrier density in Bi-2212, which is naturally overdoped, by the interaction with neighboring Bi-2223 cells.</description><subject>Bi 2Sr 2CaCu 2O x</subject><subject>Carrier density</subject><subject>Intergrowth</subject><subject>Superconducting films</subject><subject>Surface resistance</subject><issn>0921-4534</issn><issn>1873-2143</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwCUhZIVgE_EjG8YpHxUuqxKKwtlx7DEZpUuwExN-TtIgts5mR5s7V3EPIMaPnjDK4WFDFWV6UojhV6oxS4DJXO2TCKilyzgqxSyZ_kn1ykNI7HYopNiFXiz56YzGLmELqTDOMrc9uQs4545kP9SplpnFZaHzd4-86NB3G19h-dW-HZM-bOuHRb5-Sl7vb59lDPn-6f5xdz3MrRNUNbt4iwHL4F-zSInMARgBKkEZyELQoK1kCcwJAWSgdR1w67oRXWAHjYkpOtr7r2H70mDq9CsliXZsG2z5pLmVBC6EGYbkV2timFNHrdQwrE781o3rkpTe89AhDK6U3vPR4d7m9wyHFZ8Cokw1jYBci2k67Nvzj8AM6dnCg</recordid><startdate>20000415</startdate><enddate>20000415</enddate><creator>Otsuka, Jun</creator><creator>Yamamoto, Osamu</creator><creator>Sugihara, Yasuaki</creator><creator>Senzaki, Toshi</creator><creator>Ohbayashi, Kazushige</creator><creator>Inoue, Masumi</creator><creator>Fujimaki, Akira</creator><creator>Hayakawa, Hisao</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000415</creationdate><title>Surface resistance of Bi-2212 films and influence of intergrowth</title><author>Otsuka, Jun ; Yamamoto, Osamu ; Sugihara, Yasuaki ; Senzaki, Toshi ; Ohbayashi, Kazushige ; Inoue, Masumi ; Fujimaki, Akira ; Hayakawa, Hisao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Bi 2Sr 2CaCu 2O x</topic><topic>Carrier density</topic><topic>Intergrowth</topic><topic>Superconducting films</topic><topic>Surface resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Otsuka, Jun</creatorcontrib><creatorcontrib>Yamamoto, Osamu</creatorcontrib><creatorcontrib>Sugihara, Yasuaki</creatorcontrib><creatorcontrib>Senzaki, Toshi</creatorcontrib><creatorcontrib>Ohbayashi, Kazushige</creatorcontrib><creatorcontrib>Inoue, Masumi</creatorcontrib><creatorcontrib>Fujimaki, Akira</creatorcontrib><creatorcontrib>Hayakawa, Hisao</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. C, Superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Otsuka, Jun</au><au>Yamamoto, Osamu</au><au>Sugihara, Yasuaki</au><au>Senzaki, Toshi</au><au>Ohbayashi, Kazushige</au><au>Inoue, Masumi</au><au>Fujimaki, Akira</au><au>Hayakawa, Hisao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface resistance of Bi-2212 films and influence of intergrowth</atitle><jtitle>Physica. C, Superconductivity</jtitle><date>2000-04-15</date><risdate>2000</risdate><volume>331</volume><issue>2</issue><spage>164</spage><epage>170</epage><pages>164-170</pages><issn>0921-4534</issn><eissn>1873-2143</eissn><abstract>We investigated surface resistance R s of Bi-2212-based films fabricated by the multitarget sputtering technique, focusing on the effect of intergrowth on R s. The Bi-2212 single-phase film had surface resistance R s of about 1 mΩ at 30 K and 20 GHz. Intergrowth with Bi-2201 made the R s worse, while intergrowth with Bi-2223 improved, not only the R s, but also the critical current density J c more than expected from the ratio of Bi-2223. These phenomena were discussed in terms of the change in the carrier density by the intergrowth. The improvement of these properties by the intergrowth with Bi-2223 was possibly due to the decrease in carrier density in Bi-2212, which is naturally overdoped, by the interaction with neighboring Bi-2223 cells.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0921-4534(99)00627-9</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0921-4534
ispartof Physica. C, Superconductivity, 2000-04, Vol.331 (2), p.164-170
issn 0921-4534
1873-2143
language eng
recordid cdi_proquest_miscellaneous_27740439
source ScienceDirect Freedom Collection
subjects Bi 2Sr 2CaCu 2O x
Carrier density
Intergrowth
Superconducting films
Surface resistance
title Surface resistance of Bi-2212 films and influence of intergrowth
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A05%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20resistance%20of%20Bi-2212%20films%20and%20influence%20of%20intergrowth&rft.jtitle=Physica.%20C,%20Superconductivity&rft.au=Otsuka,%20Jun&rft.date=2000-04-15&rft.volume=331&rft.issue=2&rft.spage=164&rft.epage=170&rft.pages=164-170&rft.issn=0921-4534&rft.eissn=1873-2143&rft_id=info:doi/10.1016/S0921-4534(99)00627-9&rft_dat=%3Cproquest_cross%3E27740439%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c338t-22fce66b0166cbce1d66a36e767a726304587561d3669c65d2eebd2d3f9e86123%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27740439&rft_id=info:pmid/&rfr_iscdi=true