Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate

Ge films with a linearly graded Si1-xGex buffer layer (0 less than or equal to x less than or equal to 1) and GaAs films have been grown by MBE on a Si(100) substrate. Both layers are compressed in the growth direction. In the case of Ge layers, the residual strain decreases whereas the surface roug...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 2A), p.579-580
Main Authors: Yu, Guolin, Ebisu, Hiroshi, Rahman, Md. Mosaddeq ur, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi
Format: Article
Language:English
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Summary:Ge films with a linearly graded Si1-xGex buffer layer (0 less than or equal to x less than or equal to 1) and GaAs films have been grown by MBE on a Si(100) substrate. Both layers are compressed in the growth direction. In the case of Ge layers, the residual strain decreases whereas the surface roughness increases with an increase in thickness. The surface morphology of the Ge films displays a crosshatch pattern. In the case of GaAs layers, residual strain increases and surface roughness remains almost unchanged with an increase in thickness. 13 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.579