Structural and electronic properties of epitaxially grown CuInS sub(2) films

CuInS sub(2) (CIS) films of a typical thickness of 100 nm have been grown epitaxially on sulphur-terminated Si wafers of (001) and (111) orientation and on single-crystalline CaF sub(2) substrates using three-source molecular beam epitaxy (MBE). Epitaxial growth of single-phase CIS was confirmed for...

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Bibliographic Details
Published in:Thin solid films 2000-01, Vol.361, p.504-508
Main Authors: Metzner, H, Hahn, Th, Bremer, J-H, Seibt, M, Plikat, B, Dirnstorfer, I, Meyer, B K
Format: Article
Language:English
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Summary:CuInS sub(2) (CIS) films of a typical thickness of 100 nm have been grown epitaxially on sulphur-terminated Si wafers of (001) and (111) orientation and on single-crystalline CaF sub(2) substrates using three-source molecular beam epitaxy (MBE). Epitaxial growth of single-phase CIS was confirmed for stoichiometric and slightly Cu-rich CIS by means of X-ray diffraction (XRD) and Rutherford backscattering (RBS) including channelling. As a typical feature of the epilayers, we found deviations from the cation ordering which is expected for the chalcopyrite lattice. Using transmission electron microscopy (TEM), we determined a Cu-Au-type ordering to dominate on the cation sublattice of stoichiometric CIS grown on Si(001). A photoluminescence (PL) study shows that disorder and structural defects due to the epitaxial growth process lead to electronic states deep in the CIS bandgap and that these states can be successfully removed by post-deposition treatments in hydrogen and air at elevated temperatures up to 400 degree C. The results shed new light on the interplay of structural and electronic properties of the CIS compound.
ISSN:0040-6090