Surface resistances of EuBa2Cu3O7−x thin films on Al2O3 substrates with CeO2 buffer layers measured by using a TE013-mode cylindrical cavity resonator

Epitaxial c-axis EuBa2Cu3O7-x (EBCO) films were deposited on R-Al2O3 substrates with CeO2 buffer layers of various thicknesses. EBCO films of different thicknesses were prepared at various substrate temperatures (Ts), and their Rs values at 50 GHz and Jc (at 77.3 K) were measured. A 0.5-mm-thick EBC...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2002-10, Vol.378-381, p.1424-1428
Main Authors: Hashimoto, T., Obara, K., Michikami, O.
Format: Article
Language:English
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Summary:Epitaxial c-axis EuBa2Cu3O7-x (EBCO) films were deposited on R-Al2O3 substrates with CeO2 buffer layers of various thicknesses. EBCO films of different thicknesses were prepared at various substrate temperatures (Ts), and their Rs values at 50 GHz and Jc (at 77.3 K) were measured. A 0.5-mm-thick EBCO film deposited on a 30-nm-thick CeO2 buffer layer at Ts=650 C showed a minimum Rs value of 6.6 mOHM and a Jc value of 0.99x106 A/cm2 at 77.3 K. As-sputtered EBCO films of the same thickness deposited on MgO showed an Rs value of about 2 mOHM (extrapolation value) at 77.3 K. The Rs value of EBCO on R-Al2O3CeO2 was about three times larger than that on MgO substrates. This is due to the large asymmetry of R-Al2O3. 8 refs.
ISSN:0921-4534
DOI:10.1016/S0921-4534(02)01737-9