Stopping powers of A1 for MeV Si ions

Stopping powers of A1 film for Si ions (0.8–6.4 MeV) have been measured with Rutherford backscattering (RBS) technique. A new method to determine the stopping powers for low-velocity heavy projectiles was used. The experimental results of the stopping powers for low-velocity Si ions are smaller than...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2000, Vol.160 (1), p.11-15
Main Authors: Yixiong, Shen, Xiting, Lu, Zonghuang, Xia, Dingyu, Shen, Dongxing, Jiang
Format: Article
Language:English
Subjects:
A1 target
MeV Si ion
Rutherford backscattering technique
Stopping power
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Summary:Stopping powers of A1 film for Si ions (0.8–6.4 MeV) have been measured with Rutherford backscattering (RBS) technique. A new method to determine the stopping powers for low-velocity heavy projectiles was used. The experimental results of the stopping powers for low-velocity Si ions are smaller than those of the TRIM code and LSS theory.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(99)00569-8