Polarisation-independent ultrafast laser selective etching processing in fused silica

In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h −1 ) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not y...

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Bibliographic Details
Published in:Lab on a chip 2023-03, Vol.23 (7), p.1752-1757
Main Authors: Ochoa, Mario, Roldán-Varona, Pablo, Algorri, José Francisco, López-Higuera, José Miguel, Rodríguez-Cobo, Luis
Format: Article
Language:English
Subjects:
Angles (geometry)
Anisotropy
Chemical etching
Etching
Femtosecond pulses
Fused silica
Lasers
Microchannels
Polarization
Ultrafast lasers
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Summary:In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h −1 ) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not yet possible to implement. In this contribution, we identify a laser inscription regime in which high etching rates are accomplished independently of the light polarisation. In this regime (
ISSN:1473-0197
1473-0189
DOI:10.1039/d3lc00052d