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Polarisation-independent ultrafast laser selective etching processing in fused silica
In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h −1 ) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not y...
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Published in: | Lab on a chip 2023-03, Vol.23 (7), p.1752-1757 |
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creator | Ochoa, Mario Roldán-Varona, Pablo Algorri, José Francisco López-Higuera, José Miguel Rodríguez-Cobo, Luis |
description | In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h
−1
) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not yet possible to implement. In this contribution, we identify a laser inscription regime in which high etching rates are accomplished independently of the light polarisation. In this regime ( |
doi_str_mv | 10.1039/d3lc00052d |
format | article |
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−1
) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not yet possible to implement. In this contribution, we identify a laser inscription regime in which high etching rates are accomplished independently of the light polarisation. In this regime (<15 pulses per μm), we measure etching rates ∼300 μm h
−1
(4 hours in NaOH) including femtosecond-pulse energies corresponding to type II modifications. Few pulse inscriptions show a low degree of anisotropy as compared to higher number of pulses, thus enabling the polarisation insensitivity whose mechanisms are discussed. To demonstrate the capabilities of the processing, we fabricate curved and square-wave microchannels together with a complex 3D geometrical structure (stellated octahedron) containing an inter-plane arrangement with challenging angles (45°), which are difficult to achieve even employing dynamic polarisation control.
Few pulses and suitable low-energy femtosecond laser parameters achieve high etching rates (about 300 μm h
−1
) without the need to control the light polarisation, enabling the fabrication of 3D complex geometries within reasonable etching times.</description><identifier>ISSN: 1473-0197</identifier><identifier>EISSN: 1473-0189</identifier><identifier>DOI: 10.1039/d3lc00052d</identifier><identifier>PMID: 36786024</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Angles (geometry) ; Anisotropy ; Chemical etching ; Etching ; Femtosecond pulses ; Fused silica ; Lasers ; Microchannels ; Polarization ; Ultrafast lasers</subject><ispartof>Lab on a chip, 2023-03, Vol.23 (7), p.1752-1757</ispartof><rights>Copyright Royal Society of Chemistry 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-51a7912feea5c785519c2c6ace968e5e8a7653078bb598ee4b058cf426bf6e263</citedby><cites>FETCH-LOGICAL-c337t-51a7912feea5c785519c2c6ace968e5e8a7653078bb598ee4b058cf426bf6e263</cites><orcidid>0000-0003-4870-7390</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36786024$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Ochoa, Mario</creatorcontrib><creatorcontrib>Roldán-Varona, Pablo</creatorcontrib><creatorcontrib>Algorri, José Francisco</creatorcontrib><creatorcontrib>López-Higuera, José Miguel</creatorcontrib><creatorcontrib>Rodríguez-Cobo, Luis</creatorcontrib><title>Polarisation-independent ultrafast laser selective etching processing in fused silica</title><title>Lab on a chip</title><addtitle>Lab Chip</addtitle><description>In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h
−1
) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not yet possible to implement. In this contribution, we identify a laser inscription regime in which high etching rates are accomplished independently of the light polarisation. In this regime (<15 pulses per μm), we measure etching rates ∼300 μm h
−1
(4 hours in NaOH) including femtosecond-pulse energies corresponding to type II modifications. Few pulse inscriptions show a low degree of anisotropy as compared to higher number of pulses, thus enabling the polarisation insensitivity whose mechanisms are discussed. To demonstrate the capabilities of the processing, we fabricate curved and square-wave microchannels together with a complex 3D geometrical structure (stellated octahedron) containing an inter-plane arrangement with challenging angles (45°), which are difficult to achieve even employing dynamic polarisation control.
Few pulses and suitable low-energy femtosecond laser parameters achieve high etching rates (about 300 μm h
−1
) without the need to control the light polarisation, enabling the fabrication of 3D complex geometries within reasonable etching times.</description><subject>Angles (geometry)</subject><subject>Anisotropy</subject><subject>Chemical etching</subject><subject>Etching</subject><subject>Femtosecond pulses</subject><subject>Fused silica</subject><subject>Lasers</subject><subject>Microchannels</subject><subject>Polarization</subject><subject>Ultrafast lasers</subject><issn>1473-0197</issn><issn>1473-0189</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpd0UtLxDAUBeAgiu-Ne6XgRoRqHs2jSxmfMKALZ13S9FYjmXbMbQX_vdEZR3CTXMjH4XJCyBGjF4yK8rIRwVFKJW82yC4rtMgpM-Xmei71DtlDfKOUyUKZbbIjlDaK8mKXzJ76YKNHO_i-y33XwALS0Q3ZGIZoW4tDFixCzBACuMF_QAaDe_XdS7aIvQPE79F3WTsiNBn64J09IFutDQiHq3ufzG5vnif3-fTx7mFyNc2dEHrIJbO6ZLwFsNJpIyUrHXfKOiiVAQnGaiUF1aauZWkAippK49qCq7pVwJXYJ2fL3LTK-wg4VHOPDkKwHfQjVlynACYo14me_qNv_Ri7tF1SJVNUF9wkdb5ULvaIEdpqEf3cxs-K0eq77OpaTCc_ZV8nfLKKHOs5NGv6224Cx0sQ0a1f_35LfAEPu4P6</recordid><startdate>20230328</startdate><enddate>20230328</enddate><creator>Ochoa, Mario</creator><creator>Roldán-Varona, Pablo</creator><creator>Algorri, José Francisco</creator><creator>López-Higuera, José Miguel</creator><creator>Rodríguez-Cobo, Luis</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-4870-7390</orcidid></search><sort><creationdate>20230328</creationdate><title>Polarisation-independent ultrafast laser selective etching processing in fused silica</title><author>Ochoa, Mario ; Roldán-Varona, Pablo ; Algorri, José Francisco ; López-Higuera, José Miguel ; Rodríguez-Cobo, Luis</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-51a7912feea5c785519c2c6ace968e5e8a7653078bb598ee4b058cf426bf6e263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Angles (geometry)</topic><topic>Anisotropy</topic><topic>Chemical etching</topic><topic>Etching</topic><topic>Femtosecond pulses</topic><topic>Fused silica</topic><topic>Lasers</topic><topic>Microchannels</topic><topic>Polarization</topic><topic>Ultrafast lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ochoa, Mario</creatorcontrib><creatorcontrib>Roldán-Varona, Pablo</creatorcontrib><creatorcontrib>Algorri, José Francisco</creatorcontrib><creatorcontrib>López-Higuera, José Miguel</creatorcontrib><creatorcontrib>Rodríguez-Cobo, Luis</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Lab on a chip</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ochoa, Mario</au><au>Roldán-Varona, Pablo</au><au>Algorri, José Francisco</au><au>López-Higuera, José Miguel</au><au>Rodríguez-Cobo, Luis</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarisation-independent ultrafast laser selective etching processing in fused silica</atitle><jtitle>Lab on a chip</jtitle><addtitle>Lab Chip</addtitle><date>2023-03-28</date><risdate>2023</risdate><volume>23</volume><issue>7</issue><spage>1752</spage><epage>1757</epage><pages>1752-1757</pages><issn>1473-0197</issn><eissn>1473-0189</eissn><abstract>In fused silica, ultrafast laser assisted etching enables high chemical etching rates (>300 μm h
−1
) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces and 3D structures, dynamic polarisation control is difficult or not yet possible to implement. In this contribution, we identify a laser inscription regime in which high etching rates are accomplished independently of the light polarisation. In this regime (<15 pulses per μm), we measure etching rates ∼300 μm h
−1
(4 hours in NaOH) including femtosecond-pulse energies corresponding to type II modifications. Few pulse inscriptions show a low degree of anisotropy as compared to higher number of pulses, thus enabling the polarisation insensitivity whose mechanisms are discussed. To demonstrate the capabilities of the processing, we fabricate curved and square-wave microchannels together with a complex 3D geometrical structure (stellated octahedron) containing an inter-plane arrangement with challenging angles (45°), which are difficult to achieve even employing dynamic polarisation control.
Few pulses and suitable low-energy femtosecond laser parameters achieve high etching rates (about 300 μm h
−1
) without the need to control the light polarisation, enabling the fabrication of 3D complex geometries within reasonable etching times.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>36786024</pmid><doi>10.1039/d3lc00052d</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4870-7390</orcidid></addata></record> |
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source | Royal Society of Chemistry Journals |
subjects | Angles (geometry) Anisotropy Chemical etching Etching Femtosecond pulses Fused silica Lasers Microchannels Polarization Ultrafast lasers |
title | Polarisation-independent ultrafast laser selective etching processing in fused silica |
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