Temperature Dependence of the Phonons of Bulk AlN

Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000, Vol.39 (7B), p.L710-L712
Main Authors: M. Hayes, Jonathan, Martin Kuball, Martin Kuball, Ying Shi, Ying Shi, James H. Edgar, James H. Edgar
Format: Article
Language:English
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Summary:Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E 2 phonon of -(2.22±0.02)×10 -2 cm -1 /K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L710