Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires

Nanoscale forms of silicon, a very important electronic material, have interesting properties, but the investigation of Si nanowires, for example, has been hampered by difficulties in producing oriented samples. The authors report here the successful synthesis of large areas of highly oriented, very...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2000-09, Vol.12 (18), p.1343-1345
Main Authors: Shi, W. S., Peng, H. Y., Zheng, Y. F., Wang, N., Shang, N. G., Pan, Z. W., Lee, C. S., Lee, S. T.
Format: Article
Language:English
Subjects:
Nanowires
Nanowires, silicon
Silicon
Silicon oxide
Online Access:Get full text
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Summary:Nanoscale forms of silicon, a very important electronic material, have interesting properties, but the investigation of Si nanowires, for example, has been hampered by difficulties in producing oriented samples. The authors report here the successful synthesis of large areas of highly oriented, very long (1.5–2 mm) Si nanowires—as shown in the Figure—by thermal evaporation of silicon monoxide.
ISSN:0935-9648
1521-4095
DOI:10.1002/1521-4095(200009)12:18<1343::AID-ADMA1343>3.0.CO;2-Q