Atomic layer chemical vapor deposition of TiO2. Low temperature epitaxy of rutile and anatase

It is demonstrated that atomic layer chemical vapour deposition is an excellent technique for growing epitaxial TiO2 thin films at low temperatures. Using TiI4 and H2O2 as precursors, both rutile and anatase phases were deposited. Anatase is invariably obtained at lower deposition temperatures, but...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2000-09, Vol.147 (9), p.3319-3325
Main Authors: SCHUISKY, Mikael, HARSTA, Anders, AIDLA, Aleks, KUKLI, Kaupo, KÜSLER, Alma-Asta, AARIK, Jaan
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:It is demonstrated that atomic layer chemical vapour deposition is an excellent technique for growing epitaxial TiO2 thin films at low temperatures. Using TiI4 and H2O2 as precursors, both rutile and anatase phases were deposited. Anatase is invariably obtained at lower deposition temperatures, but the temperature of the anatase/rutile phase boundary is affected by the substrate material chosen. Phase-pure rutile was obtained down to 275 C on alpha-Al2O3 (012), while phase-pure anatase was obtained up to 375 C on MgO (001). The rutile phase was found to grow epitaxially on both alpha- Al2O3 (012) and alpha-Al2O3 (001) substrates with the in-plane orientational relationships [010]rutile // [100]alpha-Al2O3; [10bar1]rutile // [bar1bar21]alpha-Al2O3 and [001]rutile // [120]alpha-Al2O3, and [010]rutile // [100]alpha-Al2O3, respectively. The anatase phase was found to grow epitaxially on MgO (001) with the in-plane orientational relationships [010]anatase // [010]MgO and [001]anatase // [100]MgO. XRD measurements verified that epitaxy was still obtained at a deposition temperature of 375 C. This deposition temperature is considerably lower than that commonly applied to realise heteroepitaxy of titanium oxide films. 38 refs.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1393901